i, u na.. 20 stern ave. springfield, new jersey 07081 usa npn 2n3773*, pnp 2N6609 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 complementary silicon power transistors the 2n3773 and 2N6609 are powerbase? power transistors designed for high power audio, disk head positioners and other linear applications. these devices can also be used in power switching circuits such as relay or solenoid drivers, dc-dc converters or inverters. features ? pb-freepackages are available** ? high safe operating area (100% tested) 150 w @ 100 v ? completely characterized for linear operation ? high dc current gain and low saturation voltage hfe = 15 (min) (a). 8.0 a, 4.0 v vce(sat) = l4 v (max) @ ic = 8.0 a, ib = 0.8 a ? for low distortion complementary designs maximum ratings (note 1) 16 a complementary power transistors 140v, 150 w marking diagram rating collector - emitter voltage collector - emitter voltage collector - base voltage emitter - base voltage collector current - continuous - peak (note 2) base current - continuous - peak (note 2) total power dissipation @ ta = 25c derate above 25' c operating and storage junction temperature range symbol vceo vcex vcbo vebo ic ib pd tj. tstg value 140 160 160 7 16 30 4 15 150 0.855 -65 to +200 unit vdc vdc vdc vdc adc adc w w/c rc tq-204 xxxx a yy ww = 3773 or 6609 = assembly location = year = work week maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. indicates jedec registered data. 2. pulse test: pulse width = 5 ms, duty cycle < 10%. thermal characteristics characteristic thermal resistance, junction-to-case symbol rejc max 1.17 unit 'can nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn 2n3773*, pnp 2N6609 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics (note 3) collector-emitter breakdown voltage (note 4) (lc = 0.2 adc, ib = 0) collector-emitter sustaining voltage (note 4) (lc = 0.1 adc, vbe(oid = 1-5 vdc. rbe = 100 ohms) collector-emitter sustaining voltage (lc = 0.2 adc, rbe = 100 ohms) collector cutoff current (note 4) (vce=120vdc, ib = 0) collector cutoff current (note 4) (vce = 140 vdc, vbe(off) = 1.5 vdc) (vce = 140 vdc, vbe(off) = 1-5 vdc, tc = 150'c) collector cutoff current (vcb = 140vdc, ie = 0) emitter cutoff current (note 4) (vbe = 7 vdc, ic = 0) vceo(sus) vcex(sus) vcer(5u5) iceo icex icbo iebo 140 160 150 - - ? - - - - 10 2 10 2 5 vdc vdc vdc madc madc madc madc on characteristics (note 3) dc current gain (lc = 8 adc, vce = 4 vdc) (note 4) (lc = 16adc,vce = 4vdc) collector-emitter saturation voltage (lc = 8 adc, ib = 800 madc) (note 4) (lc = 16 adc, ib = 3.2 adc) base-emitter on voltage (note 4) (lc = 8 adc, vce = 4 vdc) hfe vce(sat) vbe(oi) 15 5 - - ? 60 - 1.4 4 2.2 - vdc vdc dynamic characteristics magnitude of common-emitter small-signal, short-circuit, forward current transfer ratio (lc= 1 a, f = 50khz) small-signal current gain (note 4) (lc = 1 adc, vce = 4 vdc, f = 1 khz) ihfel hfe 4 40 " - " - second breakdown characteristics second breakdown collector current with base forward biased t = 1 s (non-repetitive), vce = 100 v, see figure 12 's/b 1.5 _ adc 3, pulse test: pulse width = 300 us, duty cycle 2%. 4. indicates jedec registered data.
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